Direct observation of substitutional Ga after ion implantation in Ge by means of extended x-ray absorption fine structure

نویسندگان

  • S. Decoster
  • B. Johannessen
  • C. J. Glover
  • S. Cottenier
  • T. Bierschenk
  • H. Salama
  • F. Kremer
  • M. C. Ridgway
  • K. Temst
  • A. Vantomme
چکیده

Related Articles Mechanisms of boron diffusion in silicon and germanium App. Phys. Rev. 2013, 3 (2013) Formation of Si or Ge nanodots in Si3N4 with in-situ donor modulation doping of adjacent barrier material AIP Advances 3, 012109 (2013) Mechanisms of boron diffusion in silicon and germanium J. Appl. Phys. 113, 031101 (2013) Experimental verification of intermediate band formation on titanium-implanted silicon J. Appl. Phys. 113, 024104 (2013) Efficient n-type doping of Si nanocrystals embedded in SiO2 by ion beam synthesis Appl. Phys. Lett. 102, 013116 (2013)

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تاریخ انتشار 2013